dv 502a thermal evaporator (Denton Vacuum)
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dv 502a thermal evaporator
Dv 502a Thermal Evaporator, supplied by Denton Vacuum, used in various techniques. Bioz Stars score: 95/100, based on 505 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/dv+502a+thermal+evaporator/DV-502/arxiv__2509__21372-217-9-7
Average 95 stars, based on 505 article reviews
Dv 502a Thermal Evaporator, supplied by Denton Vacuum, used in various techniques. Bioz Stars score: 95/100, based on 505 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/dv+502a+thermal+evaporator/DV-502/arxiv__2509__21372-217-9-7
Average 95 stars, based on 505 article reviews
dv 502a thermal evaporator - by Bioz Stars,
2026-09
95/100 stars
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other:Article Title: Effect of Post-Deposition Processing on ZnO Thin Films and Devices Article Snippet: Post-deposition processing was conducted on ZnO thin films deposited by radio frequency (RF) magnetron sputtering.. Rapid thermal annealing (RTA) and ion implantation followed by RTA gave increased conductivity and the latter increased Hall-effect mobility from 1.7 cm V 1 s 1 to 9.5 cm V 1 s 1 Metal–semiconductor–metal photodetectors (MSM-PDs) had a low dark current, a high ratio of photo to dark current, and a high responsivity of 2.1 A/W.. Current transport mechanisms of MSM-PDs with post-annealing exhibited two primary space-charge-limited mechanisms, m > 2 and m< 1, following I V. The non-annealed ZnO film gave one mechanism with m< 1 in photo I–V. Article Title: [2509.21372] Polymer-based probabilistic bits for thermodynamic computing Article Snippet: Aluminum top contacts were deposited using a Article Title: Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films Article Snippet: Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N + ion implantation processing were fabricated using a ZnO/Si structure.. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation.. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. |